DETAILS, FICTION AND N TYPE GE

Details, Fiction and N type Ge

s is always that of the substrate materials. The lattice mismatch contributes to a substantial buildup of pressure Electrical power in Ge levels epitaxially grown on Si. This pressure energy is largely relieved by two mechanisms: (i) era of lattice dislocations for the interface (misfit dislocations) and (ii) elastic deformation of each the substra

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